We propose a definition of MOSFET e

We propose a definition of MOSFET effective channel, that provides a method of determining the effective length as a constant, and external resistance virtually as a constant, even for lightly doped drain transistors. A unified relationship between this effective length and MOSFET drive current that is common to a wide range of drain structure was confirmed. Therefore, the effective length is useful, not only for compact analytical model, but also as an index of MOSFET performance applicable to both single drain and LDD devices. The dependence of the channel length on the source/drain structure was clarified by introducing the concept of local contribution to channel length. The effective length varies, even if the metallurgical channel length is fixed, depending on the design of the source / drain.

結果 (ラテン語) 1:

propositum a ratio of mosfet efficaciter medium, effectiva, quae sit ratio, quae determinent continuam longitudo, et virtute, ut externo resistentia a constans, sit etiam leviter doped transistorum exhaurire. una haec relatio inter mensuram et mosfet efficaciter agat, ut, rhoncus a, est communis ratio confirmata exhaurire. Ergo,ad effectum denique est utile, non est foedus quod scientise exemplar, sed etiam effectus se habet ad utrumque, ut indicem mosfet sumens ldd una vita. inde etiam constare potest ex canali in longitudine / apparuit et sepiam eam maceria, exhauriat rationem de ratione loci, ad medium tandem confert. ad effectum denique est alius, si solus est metallurgical iter longum,unde secundum rationem / effundi.